【摘要】In this paper, a method to characterize the high-frequency (HF) behavior of six pack insulated gate bipolar transistors (IGBTs) power module (PM) is presented. The method is based on experimental measurements at the external pins of the device and it allows one to extract internal inductive and capacitive parasitic coupling without the knowledge of structural and physical parameters of the PM. The HF model of a six pack IGBTs PM has been developed, in the frequency range of 150 kHz-30 MHz, and it has been implemented in MATLAB environment. The method has been experimentally validated by comparing the frequency behavior of the PM with the simulated response. Moreover, the HF conducted disturbances, generated by the PM and measured in the dc link, have been compared with the simulation results verifying the proposed model.
【摘要机译】本文提出了一种表征六块绝缘栅双极型晶体管（IGBT）电源模块（PM）的高频（HF）行为的方法。该方法基于设备外部引脚上的实验测量，它允许人们提取内部电感和电容寄生耦合，而无需了解PM的结构和物理参数。已经开发了六组IGBT PM的HF模型，其频率范围为150 kHz-30 MHz，并已在MATLAB环境中实现。通过将PM的频率特性与模拟响应进行比较，该方法已通过实验验证。此外，由PM产生并在直流链路中测量的HF传导干扰已与仿真结果进行了比较，从而验证了所提出的模型。